| BST铁电薄膜材料的研究现状及其进展 |
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| 引用本文： | 苗鸿雁,马景云,谈国强,孙正球. BST铁电薄膜材料的研究现状及其进展[J]. 材料导报, 2005, 19(12): 99-101,105 |
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| 作者姓名： | 苗鸿雁 马景云 谈国强 孙正球 |
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| 作者单位： | 陕西科技大学材料科学与工程学院,咸阳,712081 |
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| 摘 要： | 铁电钛酸锶钡(BaxSr1-x)TiO3是一种具有十分优越铁电/介电性能的材料,在可调微波器件及动态随机存储器件方面有很好的应用前景.介绍了钛酸锶钡薄膜材料的基本结构、制备技术、掺杂改性等方面的研究现状,并在性能改善的基础上,指出了该材料的未来发展方向.
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| 关 键 词： | 钛酸锶钡薄膜 性能改善 微波器件 存储器 |
Research Progress and Future Trends of BST Thin Films |
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| MIAO Hongyan,MA Jingyun,TAN Guoqiang,SUN Zhengqiu. Research Progress and Future Trends of BST Thin Films[J]. Materials Review, 2005, 19(12): 99-101,105 |
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| Authors: | MIAO Hongyan MA Jingyun TAN Guoqiang SUN Zhengqiu |
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| Affiliation: | College of Material Science and Engineering, Shaanxi University of Science and Technology, Xianyang 712081 |
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| Abstract: | Ferroelectric(Ba_xSr_(1-x))TiO_3(barium strontium titanium oxide.BST)thin films have excellent fer roelectric/dielectric properties and promising application prospect in tunable microwave devices and dynamic random ac- cess devices.In this reporter,the basic structures,preparation technology,dopping modification of BST are reviewed. Finally,according to the modification,a new seedtime of BST are presented. |
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| Keywords: | BST thin films capability modification microwave devices dynamic random access memory |
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