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一种有限差分IGBT/FWD模型研究
引用本文:孟金磊,宁圃奇,温旭辉,张栋. 一种有限差分IGBT/FWD模型研究[J]. 电源学报, 2015, 13(4): 46-52
作者姓名:孟金磊  宁圃奇  温旭辉  张栋
作者单位:中国科学院电工研究所高功率密度电气驱动及电动汽车技术研究部,中国科学院电工研究所高功率密度电气驱动及电动汽车技术研究部,中国科学院电工研究所高功率密度电气驱动及电动汽车技术研究部,中国科学院电工研究所高功率密度电气驱动及电动汽车技术研究部
摘    要:提出了一种适用于多种IGBT/FWD芯片结构的有限差分仿真模型。该模型具有较高的精度,良好的计算速度和收敛性,并能反映温度变化对IGBT/FWD特性的影响。首先深入分析了IGBT/FWD芯片的物理建模过程,然后通过双脉冲实验验证了模型准确性和温度影响特性,为解决精确测量电流的问题,提出了一种使用刺刀螺母连接器和采样电阻测量电流的方法。

关 键 词:有限差分模型;电流测量;IGBT
收稿时间:2015-06-05
修稿时间:2015-07-22

Studies on a Finite Difference IGBT/FWD Model
MENG Jinlei,NING Puqi,WEN Xuhui and Zhang Dong. Studies on a Finite Difference IGBT/FWD Model[J]. Journal of Power Supply, 2015, 13(4): 46-52
Authors:MENG Jinlei  NING Puqi  WEN Xuhui  Zhang Dong
Affiliation:Institute of Electrical Engineering Chinese Academy of Sciences,Institute of Electrical Engineering Chinese Academy of Sciences,Institute of Electrical Engineering Chinese Academy of Sciences,Institute of Electrical Engineering Chinese Academy of Sciences
Abstract:A novel finite difference modeling method for various structures of IGBT/FWD chips is presented. The novel model has high accuracy, high calculation speed and stable convergence. The method can be extended to characterize the temperature effect of IGBT/FWD. After developing the models of IGBT/FWD chips, double-pulse tests were conducted and thus verified the accuracy of the presented method under different ambient temperatures. To improve the testing quality, a novel current measuring method with a Bayonet nut connector and sampling resistors was introduced in the tests.
Keywords:finite difference model   current measurement   Insulated gate bipolar transistor.
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