A model of reduction of oxidation-enhanced diffusion in heavily doped Si layers

A model of reduction of oxidation-enhanced diffusion (OED) in heavily doped Si layers via bulk recombination of self-interstitials at centers associated with the dopant is suggested. The allowance made for the recombination of excess self-interstitials, which are generated upon thermal oxidation, allows one to describe the dependence of OED reduction on the doping level. The experimental data on the OED of B and P impurities in uniformly doped Si layers are analyzed. From the analysis, the recombination-rate constants are determined and capture radii are estimated for various variants of interaction of excess self-interstitials with impurity atoms and impurity-vacancy pairs.