| MSM光电探测器特性二维数值模拟 |
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| 引用本文： | 王庆康 Bette.,W.MSM光电探测器特性二维数值模拟[J].固体电子学研究与进展,1992,12(4):321-325. |
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| 作者姓名： | 王庆康 Bette. W |
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| 作者单位： | 上海交通大学微电子技术研究所，上海交通大学微电子技术研究所，德国亚琛工业大学半导体电子学研究所 200030，200030 |
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| 基金项目： | 中国国家自然科学基金会，德国德意志研究联合会联合资助 |
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| 摘 要： | 为了解释在InGaAs金属-半导体-金属光电探测器(MSM—PD)内光产生载流子的行为及器件内电场分布,本文用有限元法数值求解了含复合项的二维泊松方程、电流连续方程及电荷俘获速率方程。得到了InGaAs MSM光电探测器的电流—电压特性及器件内电场和载流子分布。模拟结果解释了实验观察到的雪崩击穿现象,并表明电子电流比空穴电流提前饱和。
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| 关 键 词： | 光电探测器 模拟 |
Two Dimensional Simulation of Characteristics for MSM Photodetectors |
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| Wang Qingkang,Shi Changxing.Two Dimensional Simulation of Characteristics for MSM Photodetectors[J].Research & Progress of Solid State Electronics,1992,12(4):321-325. |
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| Authors: | Wang Qingkang Shi Changxing |
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| Abstract: | Poisson's equation, current-continuity equation and electric charge trapping rate equation involving recombination terms are solved numerically by means of finite-ele-ment method in order to explain the behaviour of photogenerated carriers and the distribution of electric fields in metal-semiconductor-metal photodetectors(MSM-PD). Current-voltage characteristics and space-charge distributions in an InGaAs MSM photodetector are obtained numerically. The results explain the experimental observed phenomenon and demonstrate that the current contributed by electrons is saturated earlier than the hole current. |
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| Keywords: | Photodetector Simulation |
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