Two-step annealing of hot wire chemical vapor deposited a-Si:H films |
| |
| Authors: | B. Roy R. C. Reedy D. W. Readey |
| |
| Affiliation: | (1) Department of Metallurgy and Materials Engineering, Colorado School of Mines, Golden, CO 80401, USA;(2) Materials Engineering, New Mexico Institute of Technology, Jones Hall 159, 801 Leroy Place, Socorro, NM 87801, USA;(3) National Center for Photovoltaics, NREL, Golden, CO 80401, USA |
| |
| Abstract: | A two-step annealing process was used to investigate the effect of dehydrogenation on crystallization and grain growth of low and high hydrogen content hot wire chemical vapor deposited (HWCVD) a-Si:H films. A low temperature pre-annealing followed by a rapid thermal annealing step at 600 °C was carried out. For the high hydrogen content film XRD (111) peak narrowed quite a bit, while opposite effect was observed for the low hydrogen content film. According to the grain sizes as calculated from TEM images, grain sizes of both of the two-step annealed high and low hydrogen content films are smaller than that of the single stage annealed film. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
