Rate of change of oxygen chemical potential in liquid PbO−SiO2 binary solution |
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Authors: | Minoru Sasabe Kazuhiro Goto Mayumi Someno |
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Affiliation: | 1. Department of Metallurgical Engineering, Tokyo Institute of Technology, Meguro-ku, Ookayama, Tokyo, Japan
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Abstract: | The rate of the chemical potential change of oxygen in a liquid PbO?SiO2 binary solution, with SiO2 contents of 10, 20, and 30 mol pct, and in pure PbO, has been measured at temperatures of 900°, 950°, 1000°, 1050°, and 1100°C. The rate increased with temperature according to the Arrhenius type relation and decreased with the increase of the silica content. It is suggested that the rate-controlling step is the counter diffusion rate of Pb2+ and Pb4+ ions, which are considered to be the most easily movable ions in the PbO?SiO2 solution. The relation between the rate of oxygen chemical potential change and the electrical conductivity is also discussed for the liquid PbO?SiO2 system. |
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