Charge trapping in ion-sputtered silicon dioxide films on silicon |
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Authors: | R B Sethi D R Young J David Zook |
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Affiliation: | (1) Sherman Fairchild Center for Solid State Studies, Lehigh University, 18015 Bethlehem, Pennsylvania;(2) Honeywell Physical Science Center, 55420 Bloomington, Minneapolis, MN;(3) National Semiconductor Corporation, 95051 Santa Clara, CA |
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Abstract: | Charge trapping in thermal silicon dioxide has been previously studied in great detail. Recently there has been an interest
in depositing silicon dioxide films at lower temperatures to be compatible with device technologies that are not compatible
with the higher temperature. This paper discusses the electron and hole trapping behavior in room temperature, ion-sputtered
silicon dioxide thin films. Generally, these films are observed to trap both carriers much more efficiently then thermal silicon
dioxide films. The trapping parameters such as the trap cross-section, location, density and the trapping efficiency are reported. |
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Keywords: | Charge trapping low temperature processing MOS |
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