New technique for measuring small MOS gate currents |
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| Authors: | Garrigues M. Pavlin A. |
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| Affiliation: | Ecole Centrale de Lyon, Laboratoire dElectronique, Automatique et Mesures Electriques, UA (CNRS) no. 848 `Génie Electronique?, Ecully, France; |
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| Abstract: | A new technique is presented for the measurement of small gate currents on MOSFET devices in noisy environments. Hybrid technology is used to build the equivalent of a double-gate FAMOS-type device using two conventional MOSFET devices. Measurements of substrate hot-electron currents are given as an example. |
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