| 减小光刻中驻波效应的新方法研究 |
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| 引用本文： | 肖啸,杜惊雷,郭永康,杨静,谢世伟. 减小光刻中驻波效应的新方法研究[J]. 微细加工技术, 2002, 0(4): 36-39,44 |
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| 作者姓名： | 肖啸 杜惊雷 郭永康 杨静 谢世伟 |
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| 作者单位： | 四川大学物理科学与技术学院,成都,610064 |
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| 摘 要： | 光刻过程中，抗蚀剂内部光敏混合物（PAC）浓度受光场的影响呈驻波分布，导致抗蚀剂显影后的侧壁轮廓成锯齿状。分析了后烘（PEB）对PAC浓度分布的影响，模拟了不同后烘扩散长度下的抗蚀剂显影轮廓，从模拟结果可知利用后烘可明显减小驻波效应，得到平滑的抗蚀剂显影轮廓，提高光刻质量。
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| 关 键 词： | 光刻 驻波效应 后烘 光敏混合物 模拟 |
| 文章编号： | 1003-8213(2002)04-0036-04 |
Study on New Method of Reducing Standing Wave Effects in Lithography |
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| XIAO Xiao,DU Jing lei,GUO Yong kang,YANG Jing,XIE Shi wei. Study on New Method of Reducing Standing Wave Effects in Lithography[J]. Microfabrication Technology, 2002, 0(4): 36-39,44 |
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| Authors: | XIAO Xiao DU Jing lei GUO Yong kang YANG Jing XIE Shi wei |
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| Abstract: | During lithography process PAC concentration in the resist would be influenced by the intensity of light and its typical distribution alone the resist depth is characterized by standing wave. So the sidewall of resist would be rough after development. We analyzed the influence of PEB on PAC concentration distribution and simulated the resist profiles under various PEB diffusion lengths. From the simulation results we found that PEB could reduce the standing wave effects and improve the resist development profile. |
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| Keywords: | post-exposure bake(PEB) photoactive compound(PAC) standing wave effect simulation |
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