红外数字图象处理技术用于研究砷化镓材料中的缺陷形态分布

本文介绍了一种用于研究砷化镓材料中的缺陷(比如EL2吸收特性等)的新方法:将一束波长为1.11.5m的近红外光穿过一块厚度为48mm,直径为50mm的砷化镓材料,用红外摄象机TOSHIBA 8844摄取图象,并直接送入计算机图象处理系统DATASUD,材料中的非均匀性缺陷图象,即材料中的缺陷(EL2,位错等)在截面上的分布结构形状(十字形,网状,球粒形等)就可从屏幕上观察到。本文给出了为研究这类材料设计的ZHIMAG(ZHang IMAGe)图象处理软件包和应用ZHIMAG所获得的一些结果。ZHIMAG也适用于其它类型的图象处理。

STUDY OF MORPHOLOGICAL DISTRIBUTION OF DEFECTS IN GaAs WAFERS BY INFRARED DIGITAL IMAGE PROCESSING

A new method is applied to characterize the defects in GaAs material (e.g. the absorption of EL2 centres). The method consists of transmitting a laser beam (A=l.1-1.5 urn) through the GaAs wafer of 4-8 mm thickness and 50 mm diameter. The image is received by the TOSHIBA 8844 camera and entered into the DATASUD computer image processing system. This image is displayed on a monitor permitting to observe the inhomogeneity (like cross, cells and volutes) of the EL2 and dislocation defects. This paper will introduce a specific image processing software for GaAs material, called ZH1MAG (ZHang IMAGe) and its applications in GaAs wafer. The software can be also applied to any other types of image processing.