深亚微米FD-SOI器件亚阈模型

通过对全耗尽 SOI器件硅膜中的纵向电位分布采用准三阶近似 ,求解亚阈区的二维泊松方程 ,得到全耗尽器件的表面势公式 ;通过引入新的参数 ,对公式进行修正 ,建立深亚微米全耗尽器件的表面势模型 ,能够很好地描述漏感应势垒降低效应 .在此基础上 ,建立了亚阈漏电流模型 ,它能够很好的描述亚阈区的完整漏电流特性 ,模型计算结果与二维器件模拟软件 MEDICI的模拟结果相符

Modeling of Subthreshold Characteristics of Deep-Submicrometer FD Devices

A third order quasi cubic silicon film potential function in the vertical direction is assumed for FD SOI device,and the surface potential formula is obtained via solving the two dimensional Poisson equation in the subthreshold region.The surface potential model in the deep submicrometer FD device is presented by introducting some new parameters to describe the DIBL effect.Based on it,a drain current model in the subthreshold region is developed,which can predict the accurate subthreshold drain current characteristics.The models are verified by comparing with the two dimensional device simulator,MEDICI.