|
|||||
|
|
Carbon nitride thin films prepared by a capacitively coupled RF plasma jet |
|
| Authors: | G Dinescu E Aldea P Boieriu G Musa A Andrei M Dinescu G J H Brussaard R J Severens M C M van de Sanden D C Schram |
| Affiliation: | a Institute of Physics and Technology of Radiation Devices, Low Temperature Plasma Department, P.O. Box MG-36, 76900, Bucharest, Romania b Department of Physics, Eindhoven University of Technology, Eindhoven, The Netherlands c Institute of Nuclear Research, Pitesti, Romania |
| Abstract: | Carbon nitride thin films have been downstream deposited from a nitrogen plasma beam sustained by a capacitively coupled discharge generated between a RF powered carbon electrode and a grounded carbon nozzle. The spectral emission of the plasma jet strongly exhibits the CN radical emission indicating that the deposition takes place via a mechanism involving the CN radical. The deposition process is enhanced by DC biasing the powered electrode. The films have been investigated by X-ray diffraction, infrared absorption spectroscopy and X-ray photoelectron spectroscopy. The results show that the films are amorphous and contain in a large extent carbon nitrogen bonds. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |