十六烷基三甲基溴化铵对氢气泡模板法电沉积多孔铜薄膜的影响

以阴极析出的氢气泡为模板电沉积制得三维多孔铜薄膜,电解液的组成和工艺条件为:CuSO450g/L,H2SO4147g/L,Na2SO470.2g/L,HCHO30g/L,HCl0.25mL/L,聚乙二醇0.25mL/L,十六烷基三甲基溴化铵(CTAB)0～9.75g/L,温度25°C,电流密度3A/cm2,时间10～20s。研究了电沉积时间及CTAB用量对薄膜结构的影响。结果表明,随沉积时间的延长,镀层的主孔径增大,孔壁变厚。镀液中CTAB的存在会影响铜离子的沉积和结晶取向,随着镀液中CTAB质量浓度的增大,多孔铜薄膜的孔径先减小后增大。

Effect of cetyltrimethylammonium bromide on porous copper thin film electrodeposited with hydrogen bubbles as template

A three-dimensional porous copper thin film was prepared by electrodeposition using hydrogen bubbles as template from a bath containing CuSO4 50 g/L,H2SO4 147 g/L,Na2SO4 70.2 g/L,HCHO 30 g/L,HCl 0.25 mL/L,polyethylene glycol 0.25 mL/L,cetyltrimethylammonium bromide(CTAB) 0-9.75 g/L at temperature 25 ℃ and current density 3 A/cm2 for 10-20 s.The effects of electrodeposition time and CTAB dosage on the film structure were studied.The results showed that the diameters of main holes and the thickness of hole wall are increased with the extending of deposition time.CTAB in bath affects the deposition of copper and crystal orientation.The diameters of holes are increased firstly and then decreased with the increasing of mass concentration of CTAB in plating bath.