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Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode |
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| Authors: | KS KimRK Gupta GS ChungF Yakuphanoglu |
| Affiliation: | a School of Electrical Engineering, University of Ulsan, San 29, Mugeodong, Namgu, Ulsan 680-749, South Korea b Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, MO 65897, USA c Metallurgical and Materials Engineering Department, Firat University, Elazig, Turkey d Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia |
| Abstract: | Au/3C-SiC/p-Si/Al Schottky barrier diode was prepared using atmospheric pressure chemical vapor deposition technique. The device parameters such as barrier height, ideality factor, and series resistance were calculated using current-voltage characteristics, and were found to be 0.44 eV, 1.55, and 1.02 × 104 Ω, respectively. The photocapacitive properties of the diode were studied under various illumination intensities. The transient photocapacitance measurements indicate that the capacitance of the Au/3C-SiC/p-Si/Al Schottky diode is very sensitive to illumination. The photocapacitance of the diode increases with increase in illumination intensity. The increase in photocapacitance with increase in illumination intensity suggests that these devices could be utilized as a photocapacitive sensor for optical sensors. |
| Keywords: | Poly 3C-SiC Diode Photocapacitance Ideality factor Barrier height |
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