| VO2薄膜研究进展与发展趋势 |
| |
| 引用本文： | 张鹏,路远.VO2薄膜研究进展与发展趋势[J].兵器材料科学与工程,2012,35(4):109-112. |
| |
| 作者姓名： | 张鹏 路远 |
| |
| 作者单位： | 电子工程学院安徽省红外与低温等离子体重点实验室,安徽合肥,230037;电子工程学院安徽省红外与低温等离子体重点实验室,安徽合肥,230037 |
| |
| 摘 要： | VO2是一种新型材料,在68℃左右可发生低温半导体与高温金属相之间的可逆相变。综述了VO2薄膜的基本性能,介绍几种常用的VO2薄膜制备方法,对VO2薄膜的应用以及VO2薄膜相变温度的控制方面的研究进展进行探讨;对VO2薄膜的不同应用方向、未来发展趋势及研究重点进行展望。
|
| 关 键 词： | VO2薄膜 制备方法 相变温度 |
Research progress and development tendency of VO2 thin film |
| |
| ZHANG Peng
,
LU Yuan.Research progress and development tendency of VO2 thin film[J].Ordnance Material Science and Engineering,2012,35(4):109-112. |
| |
| Authors: | ZHANG Peng LU Yuan |
| |
| Affiliation: | (Key Laboratory of Infrared and Low Temperature Plasma of Anhui Province,Electronic Engineering Institute, Hefei 230037,China) |
| |
| Abstract: | VO2 is a new functional material,and it has a reversible transition between low-temperature semiconductor phase and high-temperature metal phase at about 68 ℃.This paper briefly reviews the basic properties,and introduces several common preparation methods of VO2 thin films.The research progress of the application and the control of phase transition temperature for VO2 thin films are discussed.Furthermore,different application direction,the development tendency and research emphases of VO2 thin film are prospected. |
| |
| Keywords: | VO2 thin film preparation methods phase transition temperature |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
