Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method |
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| Authors: | M.A. Ramirez,A.Z. Simõ esA.A. Felix,R. TararamE. Longo,J.A. Varela |
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| Affiliation: | a Laboratório Interdisciplinar em Cerâmica, Instituto de Química, Universidade Estadual Paulista, P.O. Box 355, 14801-907 Araraquara, São Paulo, Brazil
b Faculdade de Engenharia de Guaratinguetá, Universidade Estadual Paulista, 12516-410 Guaratinguetá, São Paulo, Brazil |
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| Abstract: | CaCu3Ti4O12 (stoichiometric) and Ca1.1Cu2.9Ti4O12 (non-stoichiometric) thin films have been prepared by the soft chemical method on Pt/Ti/SiO2/Si substrates, and their electrical and dielectric properties have been compared as a function of the annealing temperature. The crystalline structure and the surface morphology of the films were markedly affected by the annealing temperature and excess calcium. The films show frequency-independent dielectric properties at room temperature which is similar to those properties obtained in single-crystal or epitaxial thin films. The room temperature dielectric constant of the 570-nm-thick CCTO thin films annealed at 600 °C at 10 kHz was found to be 124. The best non-ohmic behavior (α = 12.6) presented by the film with excess calcium annealed at 500 °C. Resistive hysteresis on the I-V curves was observed which indicates these films can be used in resistance random access memory (ReRAM). |
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| Keywords: | CCTO Thin films Electrical properties Dielectric properties |
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