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Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE |
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| Authors: | J G Cederberg B Bieg J -W Huang S A Stockman M J Peanasky T F Kuech |
| Affiliation: | (1) Department of Chemical Engineering, University of Wisconsin at Madison, 1415 Engineering Drive, 53707 Madison, Wi, USA;(2) Hewlett-Packard Company, Optoelectronics Division, 370 West Trimble Road, 95131 San Jose, CA;(3) Present address: Szczecin Maritime University, Waly Cherobrego_, Szczecin, Poland |
| Abstract: | Oxygen related defects in Al-containing materials have been determined to degrade luminescence efficiency and reduce carrier lifetime and affect the performance of light emitting diodes and laser diodes utilizing these materials. We have used the;metal-organic source diethylaluminum ethoxide (DEAlO) to intentionally incorporate oxygen-related defects during growth of Al0.5In0.5P by metal-organic vapor phase epitaxy (MOVPE). The incorporated oxygen forms several energy levels in the bandgap with energies of 0.62 eV to 0.89 eV below the conduction band detected using deep level transient spectroscopy. Secondary ion mass spectroscopy measurements of the total oxygen concentration in the layers shows a direct correlation to the measured trap concentrations. Several other energy levels are detected that are not correlated with the oxygen content of the film. The possible origin of these additional levels is discussed. |
| Keywords: | Oxygen defects metal-organic vapor phase epitaxy deep level transient spectroscopy deep levels AlInP |
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