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| ITO用作铁电薄膜电极的研究 | |
| 引用本文： | 李金华,陈汉松,李坤,汤国英,陈王丽华.ITO用作铁电薄膜电极的研究[J].功能材料,2001,32(1):64-66. |
| 作者姓名： | 李金华 陈汉松 李坤 汤国英 陈王丽华 |
| 作者单位： | 1. 江苏石油化工学院功能材料实验室, 2. 香港理工大学电子工程系 3. 应用物理系, |
| 基金项目： | 香港GRC(大学研究基金会)资金资助项目 |
| 摘 要： | 研究了sol-gel掺锡氧化铟（ITO溶胶在SiO2/Si衬底和光学玻璃衬底上的成膜及结晶性能,并与CVD法生长的ITO薄膜作了对比。结论是：sol-gelITO膜,虽然具有与CVD ITO膜相似的结晶性能和较高的导电性,但以sol-gel ITO膜作下电极,无法使PLT、PZT的sol-gel膜具有明显的结晶取向。因漏电太大,sol-gel ITO也无法作sol-gel铁电膜（如PLT,PZT）的上电极。但在CVD ITO膜上,sol-gel铁电膜能很好结晶,且Au/PLT/ITO电容,具有良好的电学性能。 |
| 关 键 词： | ITO薄膜 铁电电容电极 Sol－Gel法 FERAM 随机存 |
| 文章编号： | 1001-9731(2001)01-0064-03 |
| 修稿时间： | 1999年8月25日 |
A Study of Indium Doped Tin Oxide as Electrode of Ferroelectric Films |
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| LI Jinhua ,CHEN Hansong ,LI Kun ,K.Y.Tong ,H.L.W.Chan.A Study of Indium Doped Tin Oxide as Electrode of Ferroelectric Films[J].Journal of Functional Materials,2001,32(1):64-66. | |
| Authors: | LI Jinhua CHEN Hansong LI Kun KYTong HLWChan |
| Affiliation: | LI Jinhua 1,CHEN Hansong 1,LI Kun 1,K.Y.Tong 2,H.L.W.Chan 3 |
| Abstract: | The formation and crystallization of indium doped tin oxide film by sol-gel precess on SiO 2/Si and borosilicate glass were investigated. It was compared with ITO formed by CVD method on borosilicate glass. The results show that sol-gel ITO films on SiO 2/Si and glass substrates have good crystallinity and conduction like ITO formed by CVD on borosilicate glass, but sol-gel PLT and PZT films can not form obvious texture on the sol-gel ITO film as bottom electrode. Because of large leakage sol-gel ITO film can not be used as top electrode for sol-gel PLT and PZT. The Au/PLT/ITO (CVD) ferroelectric capacitor with good electrical properties was obtained. |
| Keywords: | indium-tin oxide electrode of ferroelectric capacitor sol-gel method |
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