Characterization of photonic devices by secondary electron potential contrast |
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| Authors: | M. Buzzo M. Ciappa W. Fichtner |
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| Affiliation: | aInfineon Technologies, Quality Management and Failure Analysis, Villach, Austria;bSwiss Federal Institute of Technology (ETH), Integrated Systems Laboratory, Zurich, Switzerland |
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| Abstract: | Secondary Electron Potential Contrast has been shown recently to be a very effective method for two-dimensional mapping the dopant distribution in Silicon Carbide devices. This work extends the range of applications of the technique to the characterization of photonic devices. Special attention is paid here to the analysis of unipolar and bipolar junctions, heterostructures, and quantum wells. |
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