The corrosion behavior of Ti3SiC2 in common acids and dilute NaOH

Hot isostatically processed bulk, fine (3-5 μm) grained samples of Ti₃SiC₂ were immersed in concentrated and dilute hydrochloric, HCl, sulphuric, H₂SO₄, nitric, HNO₃, dilute hydrofluoric, HF, acids and sodium hydroxide, NaOH, solutions at room temperature. Based on six-months weight changes the dissolution rates of Ti₃SiC₂ in concentrated and dilute HCl, H₂SO₄ and dilute NaOH were found to be negligible (<2 μm/yr). In dilute HF and concentrated HNO₃ the corrosion rates were, respectively, ≈5 μm/yr and 13 μm/yr respectively. In contrast to Ti metal, the weight losses of Ti₃SiC₂ in dilute HNO₃ were higher (≈250-320 μm/yr) and depended on concentration. Post-immersion scanning electron microscopic micrographs of samples immersed in HNO₃ indicated that an oxygen rich Si-based layer forms on the surface of the samples. This implies that the Ti atoms are leached out into the HNO₃ solution, leaving behind a Si-rich layer that is ultimately oxidized. Cyclic polarization and potentiostatic i-t transients in dilute HCl and H₂SO₄ acids, strongly suggest that a thin irreversible electrically insulating layer forms on the surface of Ti₃SiC₂. Exposing a sample to a constant current density of 0.6 mA/cm² for two days resulted in the formation of a 5 μm thick SiO₂-based layer on the surface. The presence of such a layer would explain the excellent corrosion resistance of Ti₃SiC₂ in these acids.