| 非掺杂半绝缘LECGaAs中电参数与碳浓度及EL2浓度的关系 |
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| 引用本文： | 杨瑞霞 李光平. 非掺杂半绝缘LECGaAs中电参数与碳浓度及EL2浓度的关系[J]. 固体电子学研究与进展, 1999, 19(4): 428-432 |
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| 作者姓名： | 杨瑞霞 李光平 |
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| 作者单位： | [1]河北工业大学电子系 [2]天津电子材料研究所 |
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| 基金项目： | 河北省自然科学基金资助项目!（195051） |
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| 摘 要： | 利用范德堡方法和光吸收方法研究了非掺杂半绝缘（ＳＩ）ＬＥＣＧａＡｓ 中电参数与碳（Ｃ）浓度及ＥＬ２ 浓度的关系。通过比较实验结果和理论计算结果发现，这种半绝缘晶体中除Ｃ外还存在其它受主在电补偿中起重要作用
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| 关 键 词： | 砷化镓 碳 EL2 电参数 |
Dependence of the Electrical Properties on EL2 Concentration and Carbon Acceptor Concentration in Undoped Semi insulating LEC GaAs |
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| Yang Ruixia. Dependence of the Electrical Properties on EL2 Concentration and Carbon Acceptor Concentration in Undoped Semi insulating LEC GaAs[J]. Research & Progress of Solid State Electronics, 1999, 19(4): 428-432 |
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| Authors: | Yang Ruixia |
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| Abstract: | The correlations among the electrical properties, the EL2 concentration and the carbon acceptor concentration in undoped semi insulating LECGaAs are investigated quantitatively by use of optical absorption method and Van der Pauw method. Comparisons are made between the experiment results and those calculated from equation of neutrality charge and carrier statistics theory. It is found that other acceptors, except carbon, exist and play an important role in electrical compensation in this semi insulating material. |
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| Keywords: | GaAs Carbon EL2 Electrical Properties |
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