| LP－MOCVD生长伸张应变InGaAs／InP多量子阱的研究 |
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| 引用本文： | 刘宝林 杨树人. LP－MOCVD生长伸张应变InGaAs／InP多量子阱的研究[J]. 固体电子学研究与进展, 1995, 15(3): 239-243 |
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| 作者姓名： | 刘宝林 杨树人 |
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| 摘 要： | 首先从理论上研究了在应变情况下量子阱中能级的计算，然后利用ＬＰ－ＭＯＣＶＤ研究了ＩｎＧａＡｓ／ＩｎＰ组份的控制及生长条件，最后生长伸张应变为０．５％的四个量子阱ＩｎＧａＡｓ／ＩｎＰ结构材料，利用ＰＬ光谱测量得最小阶宽为１．８ｎｍ。
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| 关 键 词： | LP－MOCVD；InGaAs／InP；伸张应变；量子阱 |
The Study on Multiple Quantum Well of TensileStrained InGaAs/InP Grown by LP-MOCVD |
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| Abstract: | The energy levels of quantum well (QW) under differential strain have been calculated,the composition and growth rate of InGaAs matched with InP have been studied by Low Pressure Metallorganic Chemical Vapour Deposition (LP-MOCVD). Four-QW InGaAs/InP with 0. 5% tensile strain has been grown.The narrowest well width is 1. 8 nm by PL spectroscopy measurement. |
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| Keywords: | LP-MOCVD InGaAs/InP Tensile-strain QW |
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