| 硅基发光材料研究进展 |
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| 引用本文： | 王蓟,宁永强,任大翠,王立军.硅基发光材料研究进展[J].微纳电子技术,2002,39(8):18-21. |
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| 作者姓名： | 王蓟 宁永强 任大翠 王立军 |
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| 作者单位： | 1. 长春光学精密机械与物理研究所,吉林,长春,130021
2. 长春光学精密机械学院,吉林,长春,130022 |
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| 摘 要： | 阐述了等电子杂质、掺Er硅、硅基量子结构(包括量子阱、量子线和量子点)及多孔硅的发光机理,综述了90年代以来a-Si/SiO2、SiGe/Si等Si基异质结构材料的优异特性和诱人的应用前景,着重介绍了能带工程为Si基异质结构带来的新特性、新功能,重点介绍了硅基量子点的制备和发光机理,综述了半导体量子点材料的最新发展动态和发展趋势。
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| 关 键 词： | 硅基发光材料 光电子集成 硅基量子点 |
| 文章编号： | 1671-4776(2002)08-0018-04 |
| 修稿时间： | 2002年3月31日 |
Research development of Si-based light emitting material |
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| WANG Ji ,NING Yong-qiang ,REN Da-cui ,WANG Li-jun.Research development of Si-based light emitting material[J].Micronanoelectronic Technology,2002,39(8):18-21. |
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| Authors: | WANG Ji NING Yong-qiang REN Da-cui WANG Li-jun |
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| Affiliation: | WANG Ji 1,NING Yong-qiang 1,REN Da-cui 2,WANG Li-jun 1 |
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| Abstract: | The isoelectronic impurity,Er-doped silicon,Si-based quantum structure(including quantum well,quantum wire and quantum dot)and porous silicon luminescence are demonstrated.The progress of Si-based heterostructures since90s,including heterostructure materials,characteristics and future applications are re viewed.The emphasis is placed on the new characteristics and functions of Si-based heterostructures,which are introduced by energy band engineering.The preparation and luminescence mechanism of Si-based quantum dot are introduced chiefly.The latest progress and trend of semiconductor quantum dot materials are reviewed also. |
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| Keywords: | Si-based light emitting material OEIC Si-based quantum dot |
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