| HgCdTe液相外延薄膜表面缺陷的控制 |
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| 引用本文： | 魏彦锋,徐庆庆,陈晓静,张传杰,孙士文,方维政,杨建荣.HgCdTe液相外延薄膜表面缺陷的控制[J].红外与毫米波学报,2009,28(4):246-248. |
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| 作者姓名： | 魏彦锋 徐庆庆 陈晓静 张传杰 孙士文 方维政 杨建荣 |
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| 作者单位： | 中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海,200083 |
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| 基金项目： | 国家自然科学基金(60876012,60606026)资助项目 |
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| 摘 要： | 研究了HgCdTe液相外延薄膜表面两类宏观缺陷的形成原因.研究表明,大部分表面凹陷点(void)缺陷的形成是由衬底的蜡沾污所引入的,而表面凸起点(hill-like)是由衬底边缘脱落的CdZnTe微颗粒造成的,通过控制外延生长前的衬底处理过程,可以抑制这两类缺陷,从而生长出零(宏观)缺陷密度的优质HgCdTe外延薄膜.
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| 关 键 词： | 碲镉汞 液相外延 表面缺陷 |
| 收稿时间： | 2008/10/31 |
CONTROL OF SURFACE DEFECTS IN HgCdTe FILM GROWN BY LIQUID PHASE EPITAXY |
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| WEI Yan-Feng,XU Qing-Qing,CHEN Xiao-Jing,ZHANG Chuan-Jie,SUN Shi-Wen,FANG Wei-Zheng,YANG Jian-Rong.CONTROL OF SURFACE DEFECTS IN HgCdTe FILM GROWN BY LIQUID PHASE EPITAXY[J].Journal of Infrared and Millimeter Waves,2009,28(4):246-248. |
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| Authors: | WEI Yan-Feng XU Qing-Qing CHEN Xiao-Jing ZHANG Chuan-Jie SUN Shi-Wen FANG Wei-Zheng YANG Jian-Rong |
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| Affiliation: | Key Laboratory of Infrared Imaging Material and Detectors Shanghai Institute of Technical Physics;Chinese Academy of Sciences;Shanghai 200083;China |
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| Abstract: | Liquid phase epitaxy is a developed technique for the growth of HgCdTe films.Two kinds of macro defects on the surface of HgCdTe film were studied.It was demonstrated that the origin of the void defects was related to the wax contamination on CdZnTe substrate,while the defects of hill-like were due to the CdZnTe particles detached from the edge of the CdZnTe substrate.Through the fine controlling during the substrate preparation,these two kinds of defects can be depressed and the high quality HgCdTe films w... |
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| Keywords: | HgCdTe liquid phase epitaxy surface defects |
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