| CZ重掺锑硅单晶的锑和氧杂质 |
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| 引用本文： | 罗木昌,杨德仁,阙端麟. CZ重掺锑硅单晶的锑和氧杂质[J]. 半导体技术, 1999, 0(5): 30-33 |
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| 作者姓名： | 罗木昌 杨德仁 阙端麟 |
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| 作者单位： | 硅材料国家重点实验室,浙江大学,杭州,310027 |
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| 摘 要： | 介绍了重掺锑硅单晶生长和应用中的主要特点,并对单晶生长过程中出现的关键问题,如锑的挥发、氧含量减少的原因进行了探讨并提出了一些解决办法
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| 关 键 词： | 直拉硅单晶 锑掺杂 氧 电阻率 |
| 修稿时间： | 19981005 |
Antimony and Oxygen Impurity in Heavily Antimony-doped CZ Silicon Crystals |
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| Luo Muchang,Yang Deren,Que Duanlin. Antimony and Oxygen Impurity in Heavily Antimony-doped CZ Silicon Crystals[J]. Semiconductor Technology, 1999, 0(5): 30-33 |
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| Authors: | Luo Muchang Yang Deren Que Duanlin |
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| Affiliation: | Luo Muchang,Yang Deren,Que Duanlin(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027) |
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| Abstract: | This paper reviews the main characteristic of heavily Sb doped silicon in crystal growth and device processes,some critical problems in growth process such as evaporation of antimony,causes of oxygen reduction etc are given special discussion,and some solution approaches are also proposed. |
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| Keywords: | CZ silicon crystal Sb doped Oxygen Resistivity |
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