Thermoelectric Properties of NdGd1+xS3 Prepared by CS2 Sulfurization |
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| Authors: | Michihiro Ohta Shinji Hirai |
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| Affiliation: | (1) Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba Ibaraki, 305-8568, Japan;(2) Department of Materials Science and Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran Hokkaido, 050-8585, Japan |
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| Abstract: | Ternary rare-earth sulfides NdGd1+x S3, where 0 ≤ x ≤ 0.08, were prepared by sulfurizing Ln2O3 (Ln = Nd, Gd) with CS2 gas, followed by reaction sintering. The sintered samples have full density and homogeneous compositions. The Seebeck coefficient, electrical resistivity, and thermal conductivity were measured over the temperature range of 300 K to 950 K. All the sintered samples exhibit a negative Seebeck coefficient. The magnitude of the Seebeck coefficient and the electrical resistivity decrease systematically with increasing Gd content. The thermal conductivity of all the sintered samples is less than 1.9 W K−1 m−1. The highest figure of merit ZT of 0.51 was found in NdGd1.02S3 at 950 K. |
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| Keywords: | Thermoelectric materials rare-earth sulfides CS2 sulfurization pressure-assisted reaction sintering self-doping |
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