Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure |
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Authors: | N M Shmidt M E Levinshtein W V Lundin A I Besyul’kin P S Kop’ev S L Rumyantsev N Pala M S Shur |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) Department of Electrical, Computer, and Systems Engineering, Cll 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA |
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Abstract: | The correlation between the noise level 1/f and the degree of mosaic-structure order in gallium nitride epitaxial layers was studied for the first time. Samples with a doping level of N d ?N a ≈8×1016 cm?3 and a relatively high degree of order were characterized by the Hooge parameter α≈1.5×10?3. This value is unprecedently low for thin GaN epitaxial films. The Hooge parameter was significantly higher for samples with N d ?N a ≈1.1×1018 cm?3 and a low degree of order despite the fact that α generally decreases with increasing doping level at the same degree of order. Thus, the degree of mosaic-structure order affects not only the optical and electrical characteristics but also the fluctuation parameters of GaN epitaxial layers. |
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