应变Si1-xGex材料掺杂浓度的表征技术

在分析研究Sil-xGex材料多子迁移率模型的基础上，建立了Sil-xGex材料电阻率与其Ge组分、掺杂浓度及温度关系的曲线谱图．同时，通过对半导体材料掺杂浓度各种表征技术的分析和实验研究，提出了采用四探针法表征Sil-xGex材料掺杂浓度的技术．此表征技术与Si材料掺杂浓度的在线检测技术兼容，且更加简捷．此表征技术的可行性通过实验及对Sil-xGex材料样品掺杂浓度的理化分析得到了验证．

Characterization of Doping Concentration for Strained Si1-xGex Material

The relation between the resistivity and the dopi ng concentration with the different Ge composition was obtained based on a new majority carrier mobility model of the strained Si 1-xGe x material.According to this relation,the doping concentration of the strained Si 1-x Ge x can be measured using a collinear four-probe array.The experimental results have a good reliability and reproducibility.The characterization technique is compatible with the on-line measure of the doping concentrations of Si and much more simple and convenient.