| Effects of modulation frequency on the structure and electrical characteristics of μc-Si:H films prepared by pulsed VHF-PECVD |
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| 作者姓名： | 王世锋 张晓丹 赵颖 魏长春 许盛之 孙建 耿新华 |
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| 作者单位： | Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China |
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| 基金项目： | 国家重点基础研究发展规划(973计划)，国家高技术研究发展计划(863计划)，国家自然科学基金 |
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| 摘 要： | Modulation frequency and pulse duty cycle are two key parameters of pulsed VHF-PECVD technology. An experimental study on the mierocrystalline silicon materials prepared by pulsed VHF-PECVD technology in high deposition rate is presented. And combining the diagnosis of plasma process with optical emission spectroscopy （OES）, the dependence of microstructure and electrical properties of thin films on the pulse modulation frequency is discussed in detail.
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| 关 键 词： | 甚高频等离子体增强化学气相沉积 脉冲占空比 调制频率 微观结构 电学特性 薄膜 化学气相沉积技术 Si |
| 收稿时间： | 2008-11-05 |
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