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MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen |
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| Authors: | Petrov S. I. Kaidash A. P. Krasovitskii D. M. Sokolov I. A. Pogorel’skii Yu. V. Chalyi V. P. Shkurko A. P. Stepanov M. V. Pavlenko M. V. Baranov D. A. |
| Affiliation: | (1) “ATC-Semiconductor Technologies and Equipment” Joint-Stock Company, St. Petersburg, Russia |
| Abstract: | Technical Physics Letters - InGaN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) using ammonia as a source of nitrogen. The influence of the growth temperature and rate on the... |
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