电压源换流器开关器件损耗建模

IGBT在电力电子装置中得到了大量应用,尤其是在高压大功率电压源换流器领域,而电压源换流器损耗分析一直是电力电子领域的一个研究热点。为了能对电压源换流器损耗进行精确分析,提出一种基于波形拟合理论的绝缘栅双极晶体管与二极管的损耗分析模型。建立的损耗模型充分考虑了电压源换流器不同开关里导通电流变化对于二极管反向恢复过程参数及损耗的影响,该模型还考虑了二极管与IGBT器件相互关系,器件电压、电流、结温变化对损耗的影响,特别计入了电流拖尾过程、电路杂散电感参数的影响。搭建了2.5kV输出Boost实验电路对该损耗模型进行验证,实验结果对比证明了该损耗模型的正确性和有效性。提出的损耗模型适用于电压源换流器型直流输电(voltage sourceconverter high voltage direct current,VSC-HVDC)、静止无功补偿器(static synchronous compensator,STATCON)、统一潮流控制器(unified power flow controller,UPFC)等高压大功率应用场合的电压源换流器损耗分析。

Power Loss Modeling of Switching Devices in Voltage Source Converters

IGBT has been used in many power electronic applications,especially in the voltage source converters,and the power loss analysis of IGBT is one of the main works in power electronics.This paper presented an improved waveform fitting model to analyze power losses of IGBT and diodes in voltage source converters.It took into account variety of diode’s reverse recovery parameters with varied currents in different switching periods of the converters.This model also included dependency of collector-emitter voltages,currents,junctional temperature,and stray inductance,especially the tail current of IGBT.The validity of this model was further demonstrated by a 2.5 kV-rated boost converter.The experimental results were in accord with analytic results of the presented model.This power loss model can be applied in power loss analysis of high voltage and high power applications,such as voltage source converters,high voltage direct current transmission(VSC-HVDC),static synchronous compensators(STATCOM) and unified power flow controllers(UPFC).