| 作者单位： | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China |
