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High frequency and low voltage plasma immersion ion implantation of nitrogen on industrial pure iron at different Rf power
Authors:JJ BaoYX Leng  YY SuJY Chen  PC ZhangBin Bai  Nan Huang
Affiliation:
  • a Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, Sichuan, China
  • b State Key Laboratory of Physical Chemistry of Surfaces, Jiangyou 621700, Sichuan, China
  • Abstract:Traditional plasma ion immersion implantation (PIII) can effectively improve material mechanical property and corrosion resistance. But the modified layer by PIII is too thin for many industrial applications. High frequency and low voltage plasma immersion ion implantation (HLPIII) has advantages of PIII and nitriding. Comparing with traditional ion nitriding, HLPIII can obtain higher implantation energy and create a thick modified surface layer. In the present paper nitriding layers were synthesized on industrial pure iron using high frequency and low voltage plasma immersion ion implantation with different RF power (400 W, 600 W, and 800 W). The microstructure of the nitriding layers was characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The mechanical properties such as microhardness and wear resistance were analyzed using HXD1000 microhardness and CSEM pin-on-disk wear testing machine. The anodic polarization characteristics were measured in a 0.9% NaCl solution at room temperature to examine the corrosion resistance of the nitriding layer. The results reveal that Fe2N, Fe3N and Fe4N coexist in the nitriding layer. The nitriding layer is a corrosion protective coating on industrial pure iron in 0.9% NaCl solution. The hardness, wear resistance and corrosion resistance of the nitrided layers on industrial pure iron increase with RF power.
    Keywords:High frequency and low voltage plasma immersion ion implantation (HLPIII)  Nitriding  Industrial pure iron  Wear resistance  Corrosion resistance
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