| 射频反应磁控溅射掺杂MWCNTs的SnO2薄膜NO2气敏传感器的研究 |
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| 引用本文： | 林伟,黄世震,陈文哲.射频反应磁控溅射掺杂MWCNTs的SnO2薄膜NO2气敏传感器的研究[J].半导体学报,2010,31(2):024006-6. |
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| 作者姓名： | 林伟 黄世震 陈文哲 |
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| 作者单位： | College;Material;Science;Engineering;Fuzhou;University;Physics;Information;Fujian;Laboratory;Microelectronics;Integrated;Circuits; |
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| 基金项目： | 科技部863项目（项目号：2007AA03Z325） |
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| 摘 要： | 采用射频反应磁控溅射方法制备了氧化锡/多壁碳纳米管（SnO2/MWCNTs）薄膜材料，并在此基础上研制NO2气敏传感器。采用X射线衍射仪（XRD）、X光电子能谱仪（XPS）、扫描电子显微镜（SEM）来研究WO3/MWCNTs材料的表面形貌、表面化学状态、表面化学元素等材料特性，研究结果表明MWCNTs已经掺杂进SnO2材料，合成的SnO2/MWCNTs气敏传感器表现出对低浓度（甚至低于10ppb）的NO2气体有较高的灵敏度和较好的反应-恢复特性，并解释了该传感器的工作机理是基于pn结（P型MWCNTs和N型SnO2)作用的结果。
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| 关 键 词： | 多壁碳纳米管 二氧化锡薄膜 磁控反应溅射 气体传感器 二氧化氮 掺杂 X射线光电子能谱 扫描电子显微镜 |
| 收稿时间： | 7/10/2009 6:06:43 PM |
An MWCNT-doped SnO2 thin film NO2 gas sensor by RF reactive magnetron sputtering |
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| Lin Wei,Huang Shizhen and Chen Wenzhe.An MWCNT-doped SnO2 thin film NO2 gas sensor by RF reactive magnetron sputtering[J].Chinese Journal of Semiconductors,2010,31(2):024006-6. |
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| Authors: | Lin Wei Huang Shizhen and Chen Wenzhe |
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| Affiliation: | College of Material Science and Engineering, Fuzhou University, Fuzhou 350002, China; College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China; Fujian Key Laboratory of Microelectronics and Integrated Circuits, Fuzhou 350002;College of Material Science and Engineering, Fuzhou University, Fuzhou 350002, China; College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China; Fujian Key Laboratory of Microelectronics and Integrated Circuits, Fuzhou 350002;College of Material Science and Engineering, Fuzhou University, Fuzhou 350002, China |
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| Abstract: | An MWCNT-doped (multi-walled carbon nanotube) SnO2 thin film NO2 gas sensor, prepared by radio frequency reactive magnetron sputtering, showed a high sensitivity to ultra-low concentrations of NO2 in the parts per billion range. X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy (SEM) characterizations indicated that the MWCNTs were affected by the morphology of the SnO2 thin film and the particle size. The properties of the MWCNT-doped SnO2 sensor, such as sensitivity, selectivity, and response-recovery time, were investigated. Experimental results revealed that the MWCNT-doped SnO2 thin film sensor response to NO2 gas depended on the operating temperature, NO2 gas concentration, thermal treatment conditions, film thickness, and so on. The mechanism of the gas-sensing property of the MWCNT-doped SnO2 thin film sensor was investigated and showed that the improved gas-sensing performance should be attributed to the effects between MWCNTs (p-type) and SnO2 (n-type) semiconductors. |
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| Keywords: | SnO2 multi-walled carbon nanotube RF reactive magnetron sputtering NO2 sensor |
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