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| 808nm大功率连续半导体激光器研究 | |
| 引用本文： | 杜伟华,杨红伟,陈宏泰,李雅静,王薇,陈国鹰. 808nm大功率连续半导体激光器研究[J]. 微纳电子技术, 2008, 45(8) |
| 作者姓名： | 杜伟华 杨红伟 陈宏泰 李雅静 王薇 陈国鹰 |
| 作者单位： | 1. 河北工业大学,信息工程学院,天津,300130;中国电子科技集团公司,第十三研究所,石家庄,050051 2. 中国电子科技集团公司,第十三研究所,石家庄,050051 3. 河北工业大学,信息工程学院,天津,300130 |
| 基金项目： | 国家自然科学基金，河北省自然科学基金 |
| 摘 要： | 利用金属有机化学气相淀积(MOCVD)技术,生长了AlGaInAs/AlGaAs分别限制压应变单量子阱材料,利用该材料制成3mm宽、填充因子20%的半导体激光器阵列(版型100μm/500μm,6个发光单元),通过腔面反射率设计确定了最佳反射率,采用CS载体标准封装。在输入电流8A、水冷19℃条件下测试,输出功率达到8.4W,阈值电流为1.8A,斜率效率为1.26W/A,功率转换效率为59.4%,波长为805.7nm,光谱半宽为1.8nm;输入电流12A时,输出功率达到13W,斜率效率为1.22W/A,功率转换效率为58.9%,波长为807.9nm,光谱半宽为2.0nm。 |
| 关 键 词： | 金属有机物化学气相淀积 压应变 半导体激光器 腔面反射率 斜率效率 |
Study of 808 nm High Power Semiconductor Laser at Continuous Wave Operation |
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| Du Weihua,Yang Hongwei,Chen Hongtai,Li Yajing,Wang Wei,Chen Guoying. Study of 808 nm High Power Semiconductor Laser at Continuous Wave Operation[J]. Micronanoelectronic Technology, 2008, 45(8) | |
| Authors: | Du Weihua Yang Hongwei Chen Hongtai Li Yajing Wang Wei Chen Guoying |
| Affiliation: | Du Weihua1,2,Yang Hongwei2,Chen Hongtai2,Li Yajing1,Wang Wei1,Chen Guoying1(1.Department of Information , Engineering Hebei University of Technology,Tianjin 300130,China,2.The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
| Abstract: | AlGaInAs/AlGaAs separated confinement heterostructure compressively strained single quantum well materials were grown by metal organic chemical vapor deposition (MOCVD).The peak output power of the semiconductor laser array (3 mm width,20% fill factor,100 μm/500 μm,6 emitters)with the material is 8.4 W(drive current 8 A,19 ℃),threshold current is 1.8 A,the slop efficiency is 1.26 W/A,the 59.4% power conversion efficiency is reached,the peak wavelength is 805.7 nm,and the full width at half maximum is 1.8 nm.The peak output power is 13 W (drive current 12 A),the slop efficiency is 1.22 W/ A,the power conversion efficiency 58.9% is reached,the peak wavelength is 807.9 nm,and the full width at half maximum is 2.0 nm. |
| Keywords: | metal organic chemical vapor deposition(MOCVD) compressive strain semiconductor laser cavity facet reflectivity slope efficiency |
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