Thermal annealing effects on p-type conductivity of nitrogendoped ZnSe grown by metalorganic vapor phase epitaxy |
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Authors: | Shizuo Fujita Tsuyoshi Tojyo Tetsu Yoshizawa Shigeo Fujita |
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Affiliation: | (1) Department of Electrical Engineering, Kyoto University, 606-01 Kyoto, Japan |
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Abstract: | Post-growth thermal annealing (e.g., 500°C, 30 min), is proposed as one of the promising techniques to realize and to improve the quality of p-type ZnSe layers grown by metalorganic vapor phase epitaxy (MOVPE). The layers were grown at low temperature (350°C) by photo-assisted MOVPE with doping nitrogen from tertiarybutylamine (t-BuNH2). The flow rate of t-BuNH2 was limited to be relatively low, in order to avoid heavy doping, with which as-grown layers exhibited electrically high-resistivity; but the thermal annealing converted the layers to p-type. As the as-grown layers exhibited the stronger donor-to-acceptor pair recombination lines or the weaker donor-bound excitonic emission (Ix) lines in photoluminescence, the annealed layers resulted in higher net acceptor concentration, which was 1 x 1017 cm−4 at the optimum conditions at present. |
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Keywords: | Metalorganic vapor phase epitaxy (MOVPE) nitrogen doping p-type ZnSe thermal annealing |
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