Comparison of ECR plasma chemistries for etching of InGaP and AlGaP |
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| Authors: | J Hong J W Lee C R Abernathy S J Pearton C Constantine W S Hobson F Ren |
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| Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL;(2) Plasma Therm IP, 33716 St. Petersburg, FL;(3) Bell Laboratories, Lucent Technologies, 07974 Murray Hill, NJ |
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| Abstract: | Etch rates for InGaP and AlGaP are examined under electron cyclotron resonance (ECR) conditions in Cl2/Ar, BCl3/Ar, BCl3/N2, ICl/Ar, and IBr/Ar discharges. All the plasmas except IBr/Ar provide rapid etching of InGaP at rates above 1 μm min−1. ICl/Ar provides the highest etch rates. Unlike the Cl2/Ar and BCl3-based chemistries, the rates in ICl/Ar and IBr/Ar are almost independent of microwave power in the range 400–1000 W. Much
lower rates were obtained for AlGaP in every discharge due to the greater difficulties in bond breaking that must precede
formation and desorption of the etch products. |
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| Keywords: | AlGaP electron cyclotron resonance (ECR) IBr/Ar plasma InGaP |
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