Impact of Blend Morphology on Interface State Recombination in Bulk Heterojunction Organic Solar Cells |
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Authors: | Benjamin Bouthinon Raphaël Clerc Jérôme Vaillant Jean‐Marie Verilhac Jérôme Faure‐Vincent David Djurado Irina Ionica Gabriel Man Antoine Gras Georges Pananakakis Romain Gwoziecki Antoine Kahn |
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Affiliation: | 1. CEA, LITEN, Laboratoire des Composants Electroniques Imprimés, Grenoble, France;2. Laboratoire Hubert Curien, UMR CNRS 5516, Université Jean Monnet, Institut d'Optique Graduate School, Saint‐Etienne, France;3. CEA, INAC, Structure des Propriétés d'Architectures Moléculaires UMR5819, Grenoble, France;4. IMEP LAHC, Grenoble INP – Minatec, Grenoble, France;5. Department of Electrical Engineering, Princeton University, Princeton, NJ, USA |
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Abstract: | This work is a reinvestigation of the impact of blend morphology and thermal annealing on the electrical performance of regioregular‐P3HT:PC60BM bulk heterojunction organic solar cells. The morphological, structural, and electrical properties of the blend are experimentally investigated with atomic force microscopy, X‐ray diffraction, and time‐of‐flight measurements. Current–voltage characteristics of photodiode devices are measured in the dark and under illumination. Finally, the existence of exponential electronic band tails due to gap states is experimentally confirmed by measuring the device spectral response in the subband gap regime. This method reveals the existence of a large density of gap states, which is partially and systematically reduced by thermal annealing. When the band tails are properly accounted for in the drift and diffusion simulations, experimentally measured charge transport characteristics, under both dark and illuminated conditions and as a function of annealing time, can be satisfactorily reproduced. This work further confirms the critical impact of tails states on the performance of solar cells. |
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Keywords: | annealing bulk heterojunction interface states morphology solar cells |
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