| In_2O_3：W薄膜的制备及光电性能研究 |
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| 引用本文： | 李渊,王文文,张俊英. In_2O_3：W薄膜的制备及光电性能研究[J]. 功能材料, 2011, 42(8) |
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| 作者姓名： | 李渊 王文文 张俊英 |
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| 作者单位： | 北京航空航天大学物理科学与核能工程学院材料物理与化学研究中心,北京,100191 |
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| 基金项目： | 国家自然科学基金资助项目(50902006); 国家高技术研究发展计划(863计划)资助项目(2009AA03Z428); 霍英东教育基金资助项目(111050); 航天科技创新基金资助项目(CASC200906) |
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| 摘 要： | 采用直流磁控溅射法制备了掺钨氧化铟（In2O3：W,IWO）薄膜,研究了制备工艺对薄膜表面形貌和光电性能的影响。结果表明薄膜的表面形貌与其光电性能有着紧密联系。氧分压显著影响薄膜的表面形貌进而对薄膜的光电性能产生影响,同时溅射时间的变化也显著影响薄膜的光电性能：随着氧分压以及溅射时间的升高,薄膜的电阻率均呈现先减小后增大的变化规律,在氧分压为2.4×10-1Pa条件下,制备样品的表面晶粒排布最细密,其电阻率达到6.3×10-4Ω.cm,载流子浓度为2.9×1020cm-3,载流子迁移率为34cm2/（V.s）,可见光平均透射率约为85%,近红外光平均透射率〉80%。
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| 关 键 词： | In2O3∶W薄膜 直流磁控溅射 氧分压 溅射时间 表面形貌 光电性能 |
Fabrication and photoelectric properties of tungsten-doped indium oxide films |
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| LI Yuan,WANG Wen-wen,ZHANG Jun-ying. Fabrication and photoelectric properties of tungsten-doped indium oxide films[J]. Journal of Functional Materials, 2011, 42(8) |
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| Authors: | LI Yuan WANG Wen-wen ZHANG Jun-ying |
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| Affiliation: | LI Yuan,WANG Wen-wen,ZHANG Jun-ying(School of Physics and Nuclear Energy Engineering,Beihang University,Beijing 100191,China) |
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| Abstract: | Tungsten-doped indium oxide(In2O3:W,IWO) films were prepared by DC reactive magnetron sputtering.The effects of oxygen partial pressure and sputtering time on surface morphology and photoelectric properties of IWO films were investigated.The result showed that the film surface morphology was closely related with the photoelectric properties.It was found that photoelectric properties of films were sensitive to the oxygen partial pressure because oxygen partial pressure could significantly influence the surfa... |
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| Keywords: | In2O3∶W films DC magnetron sputtering oxygen partial pressure sputtering time surface morphology photoelectric properties |
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