| ZnO缓冲层上低温生长Al掺杂的ZnO薄膜 |
| |
| 引用本文： | 马李刚,马书懿,陈海霞,黄新丽. ZnO缓冲层上低温生长Al掺杂的ZnO薄膜[J]. 功能材料, 2011, 42(8) |
| |
| 作者姓名： | 马李刚 马书懿 陈海霞 黄新丽 |
| |
| 作者单位： | 1. 西北师范大学物理与电子工程学院,甘肃兰州,730070
2. 西北师范大学物理与电子工程学院,甘肃兰州730070／甘肃省原子分子物理与功能材料重点实验室,甘肃兰州730070 |
| |
| 基金项目： | 国家自然科学基金资助项目(10874140); 甘肃省自然科学基金资助项目(0710RJZA105) |
| |
| 摘 要： | 采用射频磁控溅射法在ZnO缓冲层上制备了不同Al掺杂量的ZnO（AZO）薄膜。利用X射线衍射（XRD）、扫描电子显微镜（SEM）和光致发光（PL）等表征技术,研究了AZO薄膜的微观结构、表面形貌和发光特性。结果表明,随着Al掺杂量的增加,ZnO薄膜的择优取向性发生了改变,且当Al的掺杂量为0.81%（原子分数）时,（002）衍射峰与其它衍射峰强度的比值达到最大,表明适合的Al掺杂使ZnO薄膜的择优取向性得到了改善。在可见光范围内薄膜的平均透过率超过70%。通过对样品光致发光（PL）谱的研究,发现所有样品出现了3个发光峰,分别对应于以444nm（2.80eV）、483nm（2.57eV）为中心的蓝光发光峰和以521nm（2.38eV）为中心较弱的绿光峰。并对样品的发光机理进行了详细的探讨。
|
| 关 键 词： | 磁控溅射法 ZnO缓冲层 Al掺杂ZnO薄膜 XRD 光致发光 |
Growth of Al doped ZnO thin films on ZnO buffer layer at low temperature |
| |
| MA Li-gang,MA Shu-yi,,CHEN Hai-xia,HUANG Xin-li. Growth of Al doped ZnO thin films on ZnO buffer layer at low temperature[J]. Journal of Functional Materials, 2011, 42(8) |
| |
| Authors: | MA Li-gang MA Shu-yi CHEN Hai-xia HUANG Xin-li |
| |
| Affiliation: | MA Li-gang1,MA Shu-yi1,2,CHEN Hai-xia1,HUANG Xin-li1(1.College of Physics and Electronic Engineering,Northwest Normal University,Lanzhou 730070,China,2.Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province,China) |
| |
| Abstract: | The Al-doped ZnO(AZO) thin films with different Al contents were deposited on ZnO buffer layer by reactive RF magnetron sputtering technology.The microstructure,surface morphology,luminescence properties of the AZO thin films were characterized by X-ray diffraction(XRD),scanning electron microscopy(SEM)and photoluminescence(PL) spectrum,respectively.The results revealed that the preferred orientation of ZnO films became with increasing Al doping concentration.And as Al doping concentration was 0.81at% the r... |
| |
| Keywords: | RF magnetron sputtering ZnO buffer layer Al doped ZnO thin films XRD Photoluminescence |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
