| 体硅上外延超薄Si1-xGex用于制备SGOI材料 |
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| 引用本文： | 薛忠营,张波,魏星,张苗.体硅上外延超薄Si1-xGex用于制备SGOI材料[J].功能材料与器件学报,2011,17(2):147-150. |
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| 作者姓名： | 薛忠营 张波 魏星 张苗 |
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| 作者单位： | 中科院上海微系统与信息技术研究所信息功能材料国家重点实验室;中国科学院研究生院; |
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| 基金项目： | 国家重点基础研究发展计划(2010CB832906); 上海应用材料研究与发展基金(082SYA1001); 新泰课题基金(092XTA1001) |
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| 摘 要： | 采用减压化学气相沉积的方法在Si衬底上制备了高质量的Si0.75Ge0.25/Si/Si0.86Ge0.14叠层材料,通过TEM、光学显微镜和XRD分析表明,外延的SiGe薄膜具有完好的晶格结构,平整的表面质量,SiGe薄膜处于完全应变状态.通过与Si上外延渐变缓冲层制备的SiGe材料比较发现,使用这种超薄的全应变Si...
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| 关 键 词： | 外延 应变 锗硅 SOGI |
Growth of ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI |
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| XUE Zhong-ying,ZHANG Bo,WEI Xing,ZHANG Miao.Growth of ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI[J].Journal of Functional Materials and Devices,2011,17(2):147-150. |
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| Authors: | XUE Zhong-ying ZHANG Bo WEI Xing ZHANG Miao |
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| Affiliation: | XUE Zhong-ying1,2,ZHANG Bo1,WEI Xing1,ZHANG Miao1(1.State Key Laboratory of Functional Material for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai,200050,China,2.Graduate School of the Chinese Academy of Sciences,Beijing,100049,China) |
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| Abstract: | High quality Si0.75Ge0.25/Si/Si0.86Ge0.14 films were fabricated on bulk Si substrate by reduced pressure chemical vapor deposition(RPCVD) system.Transmission electron microscopy(TEM) and optical microscopy revealed the epitaxial films were of the perfect crystal quality and good surface morphology.X-ray diffraction measurements indicated that Si0.75Ge0.25 and Si0.86Ge0.14 layers were fully strained.Fabricating SGOI materials with this high quality Si0.75Ge0.25/Si/ Si0.86Ge0.14 films will reduce costs and sa... |
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| Keywords: | epitaxy strain SiGe SGOI |
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