| 硅离子注入引入纳米晶对SIMOX材料进行总剂量辐射加固 |
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| 引用本文： | 王茹,张正选,俞文杰,毕大炜,陈明,刘张李,宁冰旭.硅离子注入引入纳米晶对SIMOX材料进行总剂量辐射加固[J].功能材料与器件学报,2011,17(2):223-226. |
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| 作者姓名： | 王茹 张正选 俞文杰 毕大炜 陈明 刘张李 宁冰旭 |
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| 作者单位： | 信息功能材料国家重点实验室中国科学院上海微系统与信息技术研究所; |
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| 摘 要： | 本研究工作采用硅离子注入和高温退火工艺对SIMOX材料的BOX层进行总剂量辐射加固.辐射实验结果证明了该加固方法的有效性.PL谱和HRTEM图像显示了硅离子注入及退火工艺在材料的BOX层中引入了Si纳米晶,形成电子陷阱能级,有效俘获电子,从而提高了材料BOX层的抗总剂量辐射能力.
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| 关 键 词： | 绝缘体上硅 注氧隔离 总剂量辐照 纳米晶 |
Total Dose Radiation Hardening Process for SIMOX material with Si Nanocrystals Formed by Si Ion Implantation |
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| WANG Ru,ZHANG Zheng-xuan,YU Wen-jie,BI Da-wei,CHEN Ming,LIU Zhang-li,NING Bing-xu.Total Dose Radiation Hardening Process for SIMOX material with Si Nanocrystals Formed by Si Ion Implantation[J].Journal of Functional Materials and Devices,2011,17(2):223-226. |
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| Authors: | WANG Ru ZHANG Zheng-xuan YU Wen-jie BI Da-wei CHEN Ming LIU Zhang-li NING Bing-xu |
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| Affiliation: | WANG Ru,ZHANG Zheng-xuan,YU Wen-jie,BI Da-wei,CHEN Ming,LIU Zhang-li,NING Bing-xu(The State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences) |
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| Abstract: | In this work BOX of SIMOX material is hardened for total dose radiation by Si ion implantation and high temperature annealing.Radiation experiment shows its validity.PL(Photoluminescence)spectra and HRTEM(high resolution transmission electronmicroscopy)images indicate the hardending process introduced Silicon nanocrystals into the BOX layer of SIMOX material,which made BOX more tolerant to total dose radiation. |
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| Keywords: | SOI SIMOX total dose radiation nanocrystal |
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