| 薄膜厚度对Au/ZnO/n+-Si薄膜压敏电阻器阈值电压的影响 |
| |
| 引用本文： | 季振国,王玮丽,毛启楠,席俊华. 薄膜厚度对Au/ZnO/n+-Si薄膜压敏电阻器阈值电压的影响[J]. 功能材料与器件学报, 2011, 17(2): 179-182,150 |
| |
| 作者姓名： | 季振国 王玮丽 毛启楠 席俊华 |
| |
| 作者单位： | 杭州电子科技大学电子信息学院;浙江大学硅材料国家重点实验室; |
| |
| 基金项目： | 国家自然科学基金(No.60576063); 浙江省科技计划(2008F70015,2009C31007) |
| |
| 摘 要： | 本文采用直流磁控溅射法和多次沉积与掩膜技术,在n+Si(100)衬底上制备了一系列厚度不同的ZnO薄膜,表面镀Au的探针与ZnO/n+-Si构成了一系列ZnO层厚不同的Au/ZnO/n+-Si薄膜压敏电阻器.利用X射线衍射确定沉积的ZnO薄膜为高度c轴(0002)取向的晶体薄膜,利用紫外-可见透射光谱对沉积的ZnO薄膜...
|
| 关 键 词： | ZnO薄膜 压敏电阻器 阈值电压 薄膜厚度 |
Thickness Dependence of the Threshold Voltage of ZnO Thin Film Varistors |
| |
| JI Zhen-guo,WANG Wei-li,QINAN Mao,XI Jun-hua. Thickness Dependence of the Threshold Voltage of ZnO Thin Film Varistors[J]. Journal of Functional Materials and Devices, 2011, 17(2): 179-182,150 |
| |
| Authors: | JI Zhen-guo WANG Wei-li QINAN Mao XI Jun-hua |
| |
| Affiliation: | JI Zhen-guo1,2,WANG Wei-li1,QINAN Mao2,XI Jun-hua2(1.College of Electronic Information,Hangzhou Dianzi University,Hangzhou 310018,China,2.State key laboratory for silicon materials,Zhejiang university,Hangzhou 310027,China) |
| |
| Abstract: | In this paper,a series of ZnO layers with various thicknesses were deposited on heavily doped n-type silicon(100) wafer by DC magnetron sputtering and a set of masks.An Au coated probe and the ZnO/n+-Si form a series of Au/ZnO/n+-Si structured varistors each with a different ZnO layer thickness.The microstructure of the ZnO films was studied by X-ray diffraction(XRD),which indicates that ZnO thin films have good crystalline quality with strong c-axis(0002) orientation.UV-Vis transmission spectrum was employ... |
| |
| Keywords: | ZnO thin films varistors threshold voltage thin film thickness |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
