Synthesis and analysis of buried SiC layers in monocrystalline silicon |
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| Authors: | P Durupt B Canut JA Roger J Pivot JP Gauthier |
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| Affiliation: | Laboratoire de Physique Electronique II, Université Claude Bernard Lyon I, 69622 Villeurbanne France;Département de Physique des Matériaux, associé au CNRS, Université Claude Bernard Lyon I, 69622 Villeurbanne France;Laboratoire de Cristallographie, associé au CNRS, Université Claude Bernard Lyon I, 69622 Villeurbanne France |
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| Abstract: | SiC layers were fabricated by implantation using 10–40 keV carbon ions in Si(100) and Si(111) wafers, with subsequent annealing between 800 and 1100°C. Computed and experimental IR curves were compared and the thickness of the film were determined from transmission data. The computed thickness were compared with twice the straggling width. The results lead to the conclusion that the fabricated films are continuous rather than SiC clusters in a silicon matrix. |
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