Wavelength conversion using a T-gate laser |
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| Authors: | Chih-Cheng Lu Sjijun Jiang P.S. Yeh P.J.S. Heim C.E.C. Wood M. Dagenais |
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| Affiliation: | Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA; |
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| Abstract: | Wavelength conversion from 830 nm to 837 nm of a 250 Mb/s NRZ optical signal has been demonstrated at 10/sup -9/ bit-error rate and a detector sensitivity of -29 dBm using a semiconductor power amplifier monolithically integrated at 90/spl deg/ with a GaAs-AlGaAs SQW semiconductor laser. This device offers a high degree of isolation between the input and the output and has the potential for high-speed operation with a wide continuous-wavelength conversion range. |
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