| 基于IGBT与可控硅控制的强脉冲磁场发生器的设计 |
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| 引用本文： | 刘春玲,王旭,张忠刚,杜玉远,徐彬,李一娜.基于IGBT与可控硅控制的强脉冲磁场发生器的设计[J].仪表技术与传感器,2006(12):56-57,59. |
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| 作者姓名： | 刘春玲 王旭 张忠刚 杜玉远 徐彬 李一娜 |
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| 作者单位： | 1. 东北大学,信息学院,辽宁,沈阳,110004
2. 沈空专用车辆技术保障队,辽宁,沈阳,110043 |
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| 摘 要： | 提出了一种强脉冲发生器的设计方案，应用此方案设计了基于IGBT控制充电、可控硅控制放电、可以自动运行的脉冲磁场发生设备。最大直流电压达到1200v，在放电线圈中心得到10T的磁场。该设备由1片AT89C52单片机控制其实现自动运行和手动运行，得到最高1Hz的强脉冲磁场，并阐述了磁场的标定方法。
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| 关 键 词： | 脉冲磁场发生器 可控硅 |
| 文章编号： | 1002-1841（2006）12-0056-02 |
| 收稿时间： | 2006-07-12 |
| 修稿时间： | 2006-07-122006-08-23 |
Strong Pulsed Magnetic Field Generator Design Based on IGBT and SCR Control |
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| LIU Chun-ling,WANG Xu,ZHANG Zhong-gang,DU Yu-yuan,XU Bin,LI Yi-na.Strong Pulsed Magnetic Field Generator Design Based on IGBT and SCR Control[J].Instrument Technique and Sensor,2006(12):56-57,59. |
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| Authors: | LIU Chun-ling WANG Xu ZHANG Zhong-gang DU Yu-yuan XU Bin LI Yi-na |
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| Affiliation: | 1. Information College,Northeastern University, Shenyang 110004, China; 2.Shengyang Special Automobiles Technology-Guaranteed Organization, Shengyang 110043, Chian |
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| Abstract: | A design for strong pulsed magnetic field generator was presented.A magnetic field generator based on IGBT control charge and SCR(Semiconductor Controlled Rectifier)control discharge was developed successfully.The maximum direct current voltage was up to(1 200) V and 10 tesla magnetic field was attained at the center of the coils.The generator can operate automatically or manually controlled by AT89C52.The calculation method of the magnetic field was also presented. |
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| Keywords: | IGBT |
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