氧脉冲磁控溅射法制备多晶TiO2薄膜

利用一种改进的溅射方法在载波片上制备了多晶TiO2薄膜。由于该法在溅射过程中氧气控制得像脉冲一样，所以称之为氧脉冲直流磁控反应溅射。它能有效的减轻靶中毒，样品沉积速率达到传统反应溅射法的7倍左右。分别利用椭圆偏振测厚仪、X射线衍射仪和场发射扫描电子显微镜研究了沉积时间、氧分压以及氧气开关时间对沉积速率、晶体结构和表面形貌的影响。研究结果显示，在氧分压为30％，断氧时间Toff=30s和20s下制备的样品具有最好的金红石相或锐钛矿相单一晶体结构，并且在Toff=30s时，具有最佳的表面形貌。此外，在较高沉积速率和较低氧分压下，样品更趋向于生成金红石相。利用范德堡法研究了样品的电阻率，在氧分压为30％，Toff=30s和50％，Toff=40s下制备的样品的电阻率为10·cm左右。该样品适合进一步研究透明导电TiO2薄膜。

Polycrystalline TiO2 Thin Films Deposited by a Modified Oxygen Pulse Magnetron Sputtering

Polycrystalline TiO2 thin films were deposited on slide glass by a modified sputtering, which called oxygen pulse DC magnetron reactive sputtering as oxygen was systematically controlled like pulse. This technology can effectively abate target poisoning and increase the deposition rate by about 7 times compared with conventional reactive sputtering. The effects of deposition time, oxygen partial pressure and time of oxygen on-off on deposition rate, crystal structure and surface topography were investigated by elliptical polarization measurement, X-ray diffraction （XRD）, and field emission scanning electron microscopy （FE-SEM）, respectively. The results indicated that samples deposited at oxygen partial pressure of 30%, Toff=30s and 20s have the best crystalline structure with unique phase of rutile or anatase and at Toff=30s TiO2 film has the best surface topography. Besides, the sample tends to form rutile under higher deposition rate and lower oxygen concentration. Electrical resistivity was studied by Van der Pauw method and samples with which around 10 ·cm deposited at oxygen partial pressure of 30%, Toff=30s and 50%, Toff=40s, respectively, are suit for our further study.