High transmission gain inverted-F antenna on low-resistivity Si for wireless interconnect |
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Authors: | Zhang YP Guo LH Sun M |
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Affiliation: | Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore; |
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Abstract: | Inverted-F antennas of 2-mm axial length are designed and fabricated on a low-resistivity silicon substrate (10 /spl Omega//spl middot/cm) using a post back-end-of-line process. For the first time, their performances are measured up to 110 GHz for wireless interconnects. Results show that a sharp resonance can be seen at 61 GHz for the antenna, and a high transmission gain of -46.3 dB at 61 GHz is achieved from the pair of inverted-F antennas at a separation of 10 mm on a standard 10 /spl Omega//spl middot/cm silicon wafer of 750-/spl mu/m thickness. |
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