| 6H-SiC体材料在SF_6/O_2混合气体中的ICP刻蚀 |
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| 引用本文： | 丁瑞雪,杨银堂,韩茹.6H-SiC体材料在SF_6/O_2混合气体中的ICP刻蚀[J].固体电子学研究与进展,2009,29(3). |
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| 作者姓名： | 丁瑞雪 杨银堂 韩茹 |
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| 作者单位： | 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安,710071
2. 西北工业大学航空微电子中心,西安,710072 |
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| 基金项目： | 国家部委预研项目，国家部委预研项目 |
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| 摘 要： | 采用SF6/O2作为刻蚀气体,对单晶6H-SiC材料的感应耦合等离子体(ICP)刻蚀工艺进行了研究。分析了ICP功率、偏置电压、气体混合比等工艺参数对刻蚀速率和刻蚀质量的影响。结果表明,刻蚀速率随着ICP功率及偏置电压的增大而提高,刻蚀表面质量随偏置电压及O2的含量的增大而降低,而ICP功率的变化对刻蚀质量影响不大。混合气体中O2含量为20%时刻蚀速率达到最大值,同时加入氧气后形成易于充电的SiFxOy中间层,从而促进了微沟槽的形成。
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| 关 键 词： | 碳化硅 感应耦合等离子体 刻蚀速率 微沟槽 |
The Etching of Single Crystal 6H-SiC in Inductively Coupled SF_6/O_2 Plasma |
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| DING Ruixue,YANG Yintang,HAN Ru.The Etching of Single Crystal 6H-SiC in Inductively Coupled SF_6/O_2 Plasma[J].Research & Progress of Solid State Electronics,2009,29(3). |
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| Authors: | DING Ruixue YANG Yintang HAN Ru |
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| Affiliation: | DING Ruixue1 YANG Yintang1 HAN Ru2(1 School of Microelectronics,Xidian University,Key Laboratory of Wide Band Gap Semiconductor Materialsand Devices,Xi'an,710071,CHN)(2 Aviation Microelectronics Center,Northwestern PolytechnicalUniversity,710072,CHN) |
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| Abstract: | Inductively coupled plasma(ICP)etching of single crystal 6H-silicon carbide(SiC)was investigated using oxygen-added sulfur hexafluoride(SF6)plasmas.The observed relations between the etch rate and inductive power,the concentration of the etch gases,and different bias voltages are discussed.Experimental results show that the etch rate trends to increase with the increase of ICP coil power and bias voltage.With the increase of bias voltage and the concentration of oxygen,the etched surface quality decreases.I... |
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| Keywords: | silicon carbide inductively coupled plasma etch rate microtrench |
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