Effect of the nitrous oxide plasma treatment on the MIM capacitor |
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| Authors: | Ng CH Chu S-F |
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| Affiliation: | Technol. Dev. Dept., Chartered Semicond. Manuf. Ltd., Singapore; |
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| Abstract: | We report the demonstration of near zero voltage coefficient of capacitance (VCC) by exposing the silicon nitride dielectric of the metal-insulator-metal capacitor (MIM) to nitrous oxide (N2O) plasma. Oxidization in the N2O plasma enhanced the hard breakdown field, whereby an excess of 9 MV/cm was achieved. In addition, low-temperature coefficient of capacitance (TCC) of < 20 ppm/K and high dielectric constant ⩾ 6.5 were preserved |
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